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13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,321
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 24 A | 175 mOhms | Enhancement | UniFET | ||||||
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528
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | ||||
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994
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 117 mOhms | 2 V | 41.5 nC | Enhancement | ||||||
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471
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | |||||
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521
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
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106
In-stock
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IXYS | MOSFET 28 Amps 600V 0.1 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 960 mOhms | Enhancement | CoolMOS | ||||||
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521
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | ||||||
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604
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 24 A | 60 mOhms | Enhancement | QFET | ||||||
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918
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 24A 400mOhm 10nC LogLvAB | 16 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 24 A | 60 mOhms | 1 V | 15 nC | ||||||
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401
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | |||||
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241
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | |||||
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40
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | ||||||
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407
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS |