- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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65,622
In-stock
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Nexperia | MOSFET 60 V, 320 mA dual N-ch Trench MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.7 nC | Enhancement | ||
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31,054
In-stock
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Nexperia | MOSFET N-CH 60 V 320 mA | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.8 nC | ||||||
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12,256
In-stock
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Nexperia | MOSFET MOSFET N-CH DUAL 60V | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1 Ohms | 0.6 nC | Enhancement | ||
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3,426
In-stock
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Nexperia | MOSFET N-CH 60 V 320 mA | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 60 V | 320 mA | 1.6 Ohms | 0.8 nC |
