- Manufacture :
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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
32
In-stock
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IXYS | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 112 A | 39 mOhms | 5 V | 250 nC | HyperFET | |||||
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GET PRICE |
7,200
In-stock
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Toshiba | MOSFET N-Ch 120V 112A 168W UMOSVIII 4200pF 69nC | 20 V | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 120 V | 112 A | 5.8 mOhms | 2 V to 4 V | 69 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 16 V | SMD/SMT | DirectFET-M4 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 112 A | 4.3 mOhms | 52 nC | Enhancement | ||||||
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GET PRICE |
822
In-stock
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Infineon Technologies | MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 112 A | 5.9 mOhms | 3 V | 61 nC | Enhancement | OptiMOS |
