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Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
NTMFS4C03NT1G
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RFQ
4,500
In-stock
onsemi MOSFET NFET SO8FL 30V 138A 2.1MO 20 V SMD/SMT SO-FL-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 136 A 1.5 mOhms 1.3 V 45.2 nC Enhancement
TK65G10N1,RQ
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RFQ
70
In-stock
Toshiba MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK 20 V SMD/SMT TO-262-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 100 V 136 A 3.8 mOhms 4 V 81 nC Enhancement
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