- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,191
In-stock
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IR / Infineon | MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 89 nC | |||||
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561
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 2 V to 4 V | 59 nC | Enhancement | ||
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GET PRICE |
194
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-251-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 59 nC | Enhancement | |||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 119 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 4 V | 59 nC | Enhancement | |||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 119 A | 5.5 mOhms | 59 nC | Enhancement |
