- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,058
In-stock
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Fairchild Semiconductor | MOSFET SuperSOT-3 | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 21 mOhms | Enhancement | PowerTrench | |||||
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | |||||
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1,513
In-stock
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Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||||
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2,629
In-stock
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Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 89.6 mOhms | |||||||||
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3,732
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 P-CH -20V | 8 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 50 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 60.5 mOhms |
