- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,058
In-stock
|
Fairchild Semiconductor | MOSFET SuperSOT-3 | 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 21 mOhms | Enhancement | PowerTrench | |||||
|
|
6,934
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
4,882
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
|
|
5,865
In-stock
|
onsemi | MOSFET PCH 1.8V DRIVE SERIE | +/- 12 V | SMD/SMT | SOT-26-6 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 30 mOhms | - 1.4 V | 10.5 nC | Enhancement | |||||
|
|
3,608
In-stock
|
onsemi | MOSFET PFET U8FL 60V 8A 260MOHM | SMD/SMT | WDFN-8 | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6 A | 260 mOhms | ||||||||||
|
|
2,237
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 30 mOhms | 1 V | 12 nC | Enhancement | ||||
|
|
5,334
In-stock
|
Diodes Incorporated | MOSFET P-Ch -20V ENH Mode 35mOhm -4.5V -6.0A | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 35 mOhms | - 1.5 V | 15.4 nC | Enhancement | ||||
|
|
1,236
In-stock
|
onsemi | MOSFET PFET U8FL 60V 8A 260MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6 A | 380 mOhms | - 1.5 V to - 2.5 V | 3.5 nC | |||||
|
|
1,989
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 43 mOhms | 13 nC | ||||||
|
|
2,044
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 29 mOhms | - 1.2 V | - 20 nC | Enhancement | ||||
|
|
1,720
In-stock
|
Nexperia | MOSFET PMN40UPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 37 mOhms | - 0.7 V | 15.6 nC | Enhancement | |||||
|
|
21,578
In-stock
|
Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | |||||
|
|
20,108
In-stock
|
Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | |||||
|
|
13,561
In-stock
|
Toshiba | MOSFET SM Sig P-CH MOS 12V VGSS -6A -30VDSS | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 144 mOhms | |||||||||
|
|
1,513
In-stock
|
Toshiba | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | 8 V | SMD/SMT | UF6-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 54 mOhms | - 0.3 V to - 1 V | 23.1 nC | |||||
|
|
2,629
In-stock
|
Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 89.6 mOhms | |||||||||
|
|
3,732
In-stock
|
Fairchild Semiconductor | MOSFET SOT-223 P-CH -20V | 8 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 50 mOhms | Enhancement | PowerTrench | |||||
|
|
8,995
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | ||||
|
|
VIEW | Toshiba | MOSFET SM Sig P-CH MOS ID -6A -20V -8 VGSS | 8 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 60.5 mOhms | |||||||||
|
|
VIEW | Toshiba | MOSFET MOSFET P-Ch 30V 6A | 20 V | SMD/SMT | VS8-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 28 mOhms | Enhancement | ||||||
|
|
326
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 12 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 68 mOhms | 10.5 nC |
