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- Mounting Style :
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- Vds - Drain-Source Breakdown Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
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Infineon Technologies | MOSFET P-Ch -100V -15A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 240 mOhms | 37 nC | Enhancement | SIPMOS | |||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | ||||||||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | ||||||||||
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VIEW | IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms | ||||||||||
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VIEW | IXYS | MOSFET -150V -15A | SMD/SMT | TO-263-3 | Tube | Si | P-Channel | - 150 V | - 15 A | 240 mOhms |
