- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
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11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,983
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 18A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.3 A | 44 mOhms | Enhancement | OptiMOS | ||||
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14,597
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 5.2A 28mOhm 3.6nC Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 30 V | 5.3 A | 40 mOhms | 2.6 nC | ||||||||
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2,424
In-stock
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Diodes Incorporated | MOSFET 60V 3.8A N-Channel MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 80 mOhms | Enhancement | |||||
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2,252
In-stock
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Nexperia | MOSFET PMCPB5530X/HUSON6/REEL 7" Q1/T | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 5.3 A | 70 mOhms | 0.65 V, - 0.65 V | 14.4 nC, 8.1 nC | Enhancement | ||||
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2,789
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.3 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||
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3,813
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHANNEL SOT-26 | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 32 mOhms | 9.2 nC | |||||
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1,860
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 25Vgss 70A | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 13.5 mOhms | 900 mV | 11.3 nC | Enhancement | |||
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1,923
In-stock
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Diodes Incorporated | MOSFET 650V N-Ch Enh FET 30V VDSS 25V VGSS | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.3 A | 10 mOhms | 800 mV | 17.4 nC | Enhancement | |||
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722
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5.3 A | 30 mOhms | 1 V | 22.4 nC | Enhancement | |||
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3,870
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1700V RDS ON 1 Ohm | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 5.3 A | 1 Ohm | 3.1 V | 13 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch 40V FET 5.3A 2.2W 225pF | VS6-6 | Reel | 1 Channel | Si | N-Channel | 40 V | 5.3 A | 98 mOhms |
