- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10,360
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | ||||
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GET PRICE |
3,422
In-stock
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Fairchild Semiconductor | MOSFET Dual PCh Digital | 12 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 500 mA | 780 mOhms | Enhancement | ||||
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576
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 500 mA | 1.45 Ohms | - 4 V | 1.8 nC | Enhancement | ||
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8,613
In-stock
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Nexperia | MOSFET Trench Mosfet 20V, P-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 0.7 V | 1.19 nC | Enhancement | |||
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1,773
In-stock
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Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 700 mV | 1.19 nC | Enhancement |
