- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,321,100
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.1 A | 35 mOhms | 1 V | 3.6 nC | Enhancement | ||||
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GET PRICE |
2,780
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 55 V | 5.1 A | 65 mOhms | 29 nC | Enhancement | ||||||
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2,952
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
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3,282
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 5A 44mOhm 25nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 34 mOhms | 4 V | 25 nC | |||||
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39,410
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 5.1A 57.5mOhm 9.1nC | SMD/SMT | SOT-223-4 | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 5.1 A | 57.5 mOhms | 4 V | 14 nC | |||||||
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1,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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GET PRICE |
875
In-stock
|
Diodes Incorporated | MOSFET Comp. 60V NP-Chnl | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 5.1 A | 70 mOhms | Enhancement | ||||||
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GET PRICE |
728
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A TO220-3 CoolMOS C3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | Enhancement | CoolMOS | |||||
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GET PRICE |
421
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A TO247-3 CoolMOS C3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | Enhancement | CoolMOS | |||||
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GET PRICE |
495
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 3.1A TO220FP-3 CoolMOS C3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 940 mOhms | 2.5 V | 28 nC | Enhancement | CoolMOS | |||
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GET PRICE |
1,913
In-stock
|
Fairchild Semiconductor | MOSFET 60V Dual N-Channel Logic Level UltraFER | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5.1 A | 49 mOhms | ||||||||
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GET PRICE |
4,500
In-stock
|
Diodes Incorporated | MOSFET Dl 60V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5.1 A | 40 mOhms | Enhancement | ||||||
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GET PRICE |
857
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 43mOhms 25nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 43 mOhms | 3 V to 5 V | 25 nC | Enhancement | ||||
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GET PRICE |
1,270
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 5.1mOhms 9.1nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 5.1 A | 57.5 mOhms | 2 V to 4 V | 9.1 nC | Enhancement | ||||
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GET PRICE |
2,054
In-stock
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Nexperia | MOSFET N-Chan 30V 5.1A | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.1 A | 25 mOhms | 1.5 V | 6.2 nC | Enhancement |