- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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23,040
In-stock
|
Fairchild Semiconductor | MOSFET 30V P-Channel PowerTrench MOSFET | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 3.8 mOhms | Enhancement | PowerTrench | |||||
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9,628
In-stock
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Vishay Semiconductors | MOSFET 60V 20A 46W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 0.046 Ohms | - 2.5 V | 41 nC | Enhancement | TrenchFET | |||
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7,085
In-stock
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IR / Infineon | MOSFET 1 P-CH -30V HEXFET 4.6mOhms 58nC | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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GET PRICE |
5,085
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | +/- 20 V | Through Hole | TO-251-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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GET PRICE |
5,686
In-stock
|
IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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9,460
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
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GET PRICE |
30,120
In-stock
|
onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
|
GET PRICE |
88
In-stock
|
IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | - 4 V | 103 nC | Enhancement | PolarP | |||
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16,000
In-stock
|
IR / Infineon | MOSFET MOSFT P-Ch -30V -20A 4.6mOhm | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 20 A | 6.8 mOhms | 58 nC | |||||||||
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GET PRICE |
895
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 45mOhm -10V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 40 mOhms | - 1 V | 23.2 nC | Enhancement | ||||
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71
In-stock
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IXYS | MOSFET -20.0 Amps -500V 0.450 Rds | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 20 A | 450 mOhms | Enhancement | |||||||
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GET PRICE |
9,292
In-stock
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Fairchild Semiconductor | MOSFET -30V P-Channel Power Trench | 25 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 10 mOhms | - 1.8 V | 37 nC | PowerTrench | ||||
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VIEW | Toshiba | MOSFET P-Ch MOS -20A -40V 41W 1850pF 0.0222 | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 22.2 mOhms | |||||||||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 33 mOhms | - 2 V | 12.8 nC | Enhancement | ||||
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GET PRICE |
8,404
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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GET PRICE |
8,000
In-stock
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Toshiba | MOSFET P-Ch -30V FET 27W -20A 2260pF 58nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 20 A | 12.4 mOhms | 58 nC |