- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
34 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
9,027
In-stock
|
Fairchild Semiconductor | MOSFET -12V Single P-Chan PowerTrench MOSFET | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 10 A | 16 mOhms | PowerTrench | ||||||
|
GET PRICE |
3,568
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 P-CH -20V | 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 13 mOhms | Enhancement | PowerTrench | |||||
|
GET PRICE |
2,073
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | PolarP | |||
|
GET PRICE |
3,981
In-stock
|
onsemi | MOSFET 20V 10A P-Channel | 12 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 14 mOhms | Enhancement | ||||||
|
GET PRICE |
494
In-stock
|
IXYS | MOSFET -10 Amps -600V 1 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 600 V | - 10 A | 1 Ohms | Enhancement | ||||||
|
GET PRICE |
2,691
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A pwr MOSFET | 20 V | Through Hole | TO-220-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
GET PRICE |
32,120
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -30V -10A 20mOhm 61nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 35 mOhms | 61 nC | ||||||||
|
GET PRICE |
395
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
|
GET PRICE |
5,905
In-stock
|
STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | TO-252-3 | - | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 130 mOhms | - 4 V | 6.4 nC | Enhancement | ||||
|
GET PRICE |
1,815
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 12.5 mOhms | 1 V | 34 nC | Enhancement | |||||
|
GET PRICE |
2,685
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | 1 Channel | Si | P-Channel | - 12 V | - 10 A | 12.5 mOhms | ||||||||||
|
GET PRICE |
383
In-stock
|
STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
|
GET PRICE |
1,119
In-stock
|
onsemi | MOSFET POWER MOSFET | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 10 A | 44 mOhms | - 1 V | 1.7 nC | ||||||
|
GET PRICE |
114
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | - 4 V | 50 nC | Enhancement | ||||
|
GET PRICE |
590
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 0.13Ohm 10A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 160 mOhms | 2 V to 4 V | 6.4 nC | |||||
|
GET PRICE |
940
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET | - 6 V | SMD/SMT | U-WLB1515-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 8 V | - 10 A | 8.2 mOhms | - 1.1 V | 8.1 nC | Enhancement | ||||
|
GET PRICE |
30
In-stock
|
IXYS | MOSFET -10 Amps -600V 1 Rds | Through Hole | TO-268-3 | Tube | Si | P-Channel | - 600 V | - 10 A | 1 Ohms | |||||||||||
|
GET PRICE |
117
In-stock
|
STMicroelectronics | MOSFET P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power ... | +/- 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 10 A | 180 mOhms | 2 V | 16.5 nC | Enhancement | |||||
|
GET PRICE |
183
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 20 mOhms | - 2.04 V | 61 nC | Enhancement | ||||
|
GET PRICE |
30
In-stock
|
IXYS | MOSFET -10.0 Amps -500V 1.000 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 500 V | - 10 A | 1 Ohms | Enhancement | ||||||
|
GET PRICE |
2
In-stock
|
IXYS | MOSFET -10.0 Amps -600V 0.790 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 600 V | - 10 A | 790 mOhms | - 4 V | 92 nC | Enhancement | PolarP | ||||
|
GET PRICE |
36
In-stock
|
IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | Si | P-Channel | - 150 V | - 10 A | 350 mOhms | |||||||||||
|
GET PRICE |
1,800
In-stock
|
Toshiba | MOSFET P-Ch MOS 33.8 mOhm 10V 10uA 2.0 to 3.0V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10 A | 33.8 mOhms | ||||||||||
|
GET PRICE |
5,552
In-stock
|
Toshiba | MOSFET Small Signal MOSFET V=30V, I-10A | - 25 V / + 20 V | SMD/SMT | UDFN6B-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 32 mOhms | - 2.2 V | 13.6 nC | |||||||
|
GET PRICE |
4,411
In-stock
|
Toshiba | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | 8 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 15.3 mOhms | - 1 V | 29.9 nC | Enhancement | ||||
|
GET PRICE |
5,000
In-stock
|
Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 20V 10A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 8 mOhms | Enhancement | ||||||
|
GET PRICE |
3,998
In-stock
|
onsemi | MOSFET -20V -6A P-Channel | 8 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 44 mOhms | Enhancement | ||||||
|
VIEW | IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 150 V | - 10 A | 350 mOhms | ||||||||||||
|
VIEW | IR / Infineon | MOSFET AUTO -30V 1 P-CH HEXFET 20mOhms | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 35 mOhms | 61 nC | |||||||||
|
GET PRICE |
1,038
In-stock
|
Toshiba | MOSFET N-Ch -30V FET 2580pF -10A 1.9W | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10 A | 17 mOhms |