- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
4,621
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 4.91 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS | ||
|
|
GET PRICE |
819
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||
|
|
GET PRICE |
850
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.26Ohm typ. 3.7A MDmesh M2 | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 1.26 Ohms | 3 V | 4.5 nC | ||||||
|
|
GET PRICE |
2,500
In-stock
|
Diodes Incorporated | MOSFET 600V N-Ch Enh Mode 2.3Ohm 10V 3.7A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2 Ohms | 2.5 V | 14.3 nC | Enhancement | |||
|
|
GET PRICE |
67
In-stock
|
Toshiba | MOSFET N-Ch MOS 3.7A 600V 25W 540pF 2.2 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2.2 Ohms | ||||||||||
|
|
GET PRICE |
86,200
In-stock
|
Toshiba | MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2 Ohms |
