- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,173
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.7 A | 88 mOhms | Enhancement | PowerTrench | ||||||
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14,999
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N&P-CH ENHANCE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 3.7 A | 80 mOhms | Enhancement | |||||||
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4,208
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS | 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.7 A | 120 mOhms | 3.9 nC | Enhancement | ||||||
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2,484
In-stock
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Fairchild Semiconductor | MOSFET 20V N-Ch PT MFET SCHOTTKY | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.7 A | 68 mOhms | Enhancement | PowerTrench | ||||||
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1,631
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | |||||
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1,690
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.7 A | 48 mOhms | 5.4 nC | |||||||
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VIEW | Nexperia | MOSFET PMV90ENE/TO-236AB/REEL 7" Q3/T | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 50 mOhm | 1 V | 3.6 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 30V 3.7A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.7 A | 18 mOhms | 1.2 V | 6.6 nC | Enhancement | |||||
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312
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 23nC | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 55 V | 3.7 A | 45 mOhms | 23 nC | Enhancement |