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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | +/- 8 V, +/- 12 V | SMD/SMT | uDFN-6 | - | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4 A, - 4 A | 108 mOhms, 157 mOhms | 400 mV, - 500 mV | 3.6 nC, 6.74 nC | Enhancement |
