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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
BSH201,215
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RFQ
32,163
In-stock
Nexperia MOSFET TAPE7 MOSFET 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 60 V - 300 mA 2.1 Ohms     Enhancement
DMP32D4S-13
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RFQ
17,933
In-stock
Diodes Incorporated MOSFET P-Ch ENH FET -30V 2.4mOhm -10V -300mA +/- 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel   Si P-Channel - 30 V - 300 mA 2.4 Ohms - 2.4 V 1.2 nC Enhancement
DMP32D4S-7
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RFQ
2,884
In-stock
Diodes Incorporated MOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA +/- 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 300 mA 2.4 Ohms - 2.4 V 1.2 nC Enhancement
DMP32D5LFA-7B
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RFQ
5,298
In-stock
Diodes Incorporated MOSFET 30V P-Ch Enh Mode Vdss -30V 1.5Ohm 8 V SMD/SMT X2-DFN0806-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 300 mA 900 mOhms - 400 mV 0.7 nC Enhancement
DMP32D4SW-7
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RFQ
450
In-stock
Diodes Incorporated MOSFET 30V P-CH MOSFET +/- 20 V SMD/SMT SOT-23-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 30 V - 300 mA 2.4 Ohms - 2.4 V 1.2 nC Enhancement
NX3008PBKMB,315
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RFQ
10,000
In-stock
Nexperia MOSFET P-Chan -30V -300mA 8 V SMD/SMT DFN1006B-3     Reel 1 Channel Si P-Channel - 30 V - 300 mA 4.1 Ohms      
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