- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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28,010
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 56A 18mOhm 69nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 4 V | 100 nC | ||||||
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2,469
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 60/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 5 mOhms | 1 V | 63 nC | PowerTrench Power Clip | |||
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1,711
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 56 A | 13.7 mOhms | 3 V | 23.1 nC | Enhancement | OptiMOS | ||
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4,113
In-stock
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IR / Infineon | MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 56 A | 16 mOhms | 22 nC | |||||||
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2,700
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | ||
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4,756
In-stock
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IR / Infineon | MOSFET MOSFT 55V 56A 16mOhm 70nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | |||||||
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GET PRICE |
3,852
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | ||||
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GET PRICE |
1,552
In-stock
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Fairchild Semiconductor | MOSFET 60V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 56 A | 6.5 mOhms | 3 V | 88 nC | PowerTrench Power Clip | ||||
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GET PRICE |
877
In-stock
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Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
1,013
In-stock
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Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
790
In-stock
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Fairchild Semiconductor | MOSFET N-CHAN UltraFET Pwr 56A 100V 0.025Ohm | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | |||||||
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GET PRICE |
1,962
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9.5mOhms 9.6nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 9.5 mOhms | 1.35 V to 2.35 V | 9.6 nC | Enhancement | |||
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GET PRICE |
50
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 900V 56A | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 56 A | 135 mOhms | 3.5 V to 6.5 V | 375 nC | HyperFET | |||
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GET PRICE |
983
In-stock
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IR / Infineon | MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 18 mOhms | 69 nC | Enhancement | |||||
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GET PRICE |
1,947
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||
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GET PRICE |
340
In-stock
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Fairchild Semiconductor | MOSFET TO-262 | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | ||||
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GET PRICE |
1,400
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement | ||||
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GET PRICE |
606
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 120 V | 56 A | 14.7 mOhms | 37 nC | OptiMOS | ||||
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GET PRICE |
355
In-stock
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Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 56 A | 0.012 Ohms | 2.5 V | 50 nC | Enhancement | TrenchFET | |||
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GET PRICE |
9,830
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | ||
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GET PRICE |
925
In-stock
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Infineon Technologies | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 56 A | 11.2 mOhms | 3.7 V | 59 nC | StrongIRFET | |||
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GET PRICE |
23
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 56A 16mOhm 70nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | |||||||
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GET PRICE |
29
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | |||
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GET PRICE |
42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 56 A | 45 mOhms | 4 V | 130 nC | Enhancement | |||||
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GET PRICE |
23
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | |||
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GET PRICE |
19
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 56 A | 45 mOhms | 2 V | 195 nC | Enhancement | ||||
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GET PRICE |
16
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 56 A | 100 mOhms | 4 V | 220 nC | Enhancement | |||||
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GET PRICE |
9
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 56 A | 100 mOhms | 4 V | 220 nC | Enhancement | |||||
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VIEW | Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET .25 Ohm | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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GET PRICE |
4,000
In-stock
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Infineon Technologies | MOSFET 55V N-CH HEXFET 16mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 56 A | 16 mOhms | 70 nC | Enhancement |
