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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRF9540NPBF
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RFQ
42,620
In-stock
Infineon Technologies MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC 20 V Through Hole TO-220-3     Tube 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms   64.7 nC  
IRF9540NSTRLPBF
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RFQ
14,020
In-stock
IR / Infineon MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC 20 V SMD/SMT TO-252-3     Reel 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms   64.7 nC  
IRF9540NLPBF
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RFQ
949
In-stock
Infineon Technologies MOSFET MOSFT PCh -100V -23A 117mOhm 64.7nC 20 V Through Hole TO-262-3     Tube 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms   64.7 nC  
IRF9540NSTRRPBF
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RFQ
809
In-stock
Infineon Technologies MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms - 4 V 64.7 nC Enhancement
AUIRF9540N
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RFQ
371
In-stock
IR / Infineon MOSFET AUTO -100V 1 P-CH HEXFET 117mOhms 20 V Through Hole TO-220-3     Tube 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms   64.7 nC  
IRF9540NSPBF
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RFQ
1,500
In-stock
Infineon Technologies MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC 20 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si P-Channel - 100 V - 23 A 117 mOhms   64.7 nC Enhancement
TPCC8105LQ(O
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RFQ
Toshiba MOSFET P-Ch -30V FET 30W -23A 3240pF 76nC   SMD/SMT TSON-Advance-8     Reel 1 Channel Si P-Channel - 30 V - 23 A 10.4 mOhms   76 nC  
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