- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,447
In-stock
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Texas instruments | MOSFET Single P-Ch Enh-Mode MOSFET | - 15 V, 2 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 400 mOhms | Enhancement | |||||
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GET PRICE |
1,245
In-stock
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Texas instruments | MOSFET 20V PCH NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.6 A | 150 mOhms, 285 mOhms | - 0.8 V | 1.9 nC | NexFET | |||
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GET PRICE |
769
In-stock
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Texas instruments | MOSFET MOSFET 10ns RT | - 15 V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 1 Channel | Si | P-Channel | - 15 V | - 1.6 A | 180 mOhms | Enhancement |
