- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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54,053
In-stock
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Vishay Semiconductors | MOSFET 60V -1.7A 2W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-236-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.7 A | 0.268 Ohms | - 2.5 V | 8.5 nC | Enhancement | TrenchFET | ||
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4,526
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 1.7A Micro 8 | 12 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | 5.4 nC | Enhancement | ||||
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1,747
In-stock
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Diodes Incorporated | MOSFET Dual 20V P Chl HDMOS | 12 V | SMD/SMT | MSOP-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 1.7 A | 270 mOhms | Enhancement | |||||
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5,598
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL PCh -30V 1.7A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 1.7 A | 270 mOhms | 7.5 nC | Enhancement | ||||
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16,905
In-stock
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Texas instruments | MOSFET -20V P-Channel FemtoFET MOSFET 3-PICOSTAR -55 ... | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 840 mOhms | - 1.2 V | 0.7 nC | Enhancement | PicoStar | ||
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1,019
In-stock
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Texas instruments | MOSFET -20V P-channel FemtoFET MOSFET | - 12 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 110 mOhm | - 950 mV | 0.7 nC | Enhancement | PicoStar | ||
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15
In-stock
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Toshiba | MOSFET Vds=-20V Id=-1.7A 3Pin | 12 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.7 A | 189 mOhms | Enhancement |
