- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,118
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 6.8A 35mOhm 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | ||||
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2,479
In-stock
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Fairchild Semiconductor | MOSFET PT5 100V LL ZENER 150MOHM GRN COMPOUND | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 175 mOhms | 2.8 V | 3.61 nC | PowerTrench | ||||
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2,310
In-stock
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Fairchild Semiconductor | MOSFET 100V, 6.8A, 160mOhm N-Channel BoostPak | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 6.8 A | 160 mOhms | 2.71 nC | Enhancement | PowerTrench | |||
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777
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SupreMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 460 mOhms | 2 V to 4 V | 17.8 nC | SupreMOS | |||
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4,820
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
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3,548
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 2.34 Ohms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6.8 A | 640 mOhms | 2.5 V | 15 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.8 A | 660 mOhms | 2.5 V | 15 nC | Enhancement | ||||
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167
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.8A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 6.8 A | 520 mOhms | Enhancement | CoolMOS | ||||
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73
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 6.8 A | 35 mOhms | 0.7 V | 14 nC | Enhancement |
