- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,635
In-stock
|
onsemi | MOSFET PFET 2X2 20V 4.1A 106MOHM | 8 V | SMD/SMT | WDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 100 mOhms | Enhancement | |||||
|
|
4,916
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||
|
|
5,327
In-stock
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 67 mOhms | - 1.25 V | 9 nC | Enhancement | |||
|
|
1,012
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Fet w/Int Schottky -20Vbr 20Vr | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.3 A | 85 mOhms | - 1.5 V | 7.8 nC | Enhancement |
