- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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5,764
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 2.3A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 165 mOhms | 6.9 nC | ||||||
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5,279
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 400 mOhms | 7.2 nC | ||||||
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4,137
In-stock
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Infineon Technologies | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | PQFN-6 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 170 mOhms | 1.9 nC | ||||||
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829
In-stock
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IR / Infineon | MOSFET DUAL -30V P-CH 20V VGS MAX | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | P-Channel | - 30 V | - 2.3 A | 250 mOhms | 6.9 nC | Enhancement |
