- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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21,818
In-stock
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onsemi | MOSFET -20V -5.4A P-Channel | 10 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 26 mOhms | Enhancement | ||||
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1,730
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 5.4 A | 450 mOhms | Enhancement | ||||
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1,188
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 5.4 A | 110 mOhms | 4.7 nC | |||||||
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1,800
In-stock
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onsemi | MOSFET PFET S08S 20V 5.4A 0.033R | SOIC-8 | Reel | Si | P-Channel | - 20 V | - 5.4 A | 33 mOhms | ||||||||||
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6,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID -5.4A, VDSS -12V | +/- 6 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5.4 A | 14 mOhms | - 1 V | 33 nC | Enhancement | ||
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VIEW | IR / Infineon | MOSFET AUTO -20V 1 N-CH HEXFET 60mOhms | 12 V | SMD/SMT | SO-8 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 5.4 A | 60 mOhms | 15 nC | Enhancement | |||||
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2,203
In-stock
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IR / Infineon | MOSFET MOSFT P-Ch -30V -5.4A 59mOhm | 20 V | SMD/SMT | SO-8 | Tube | Si | P-Channel | - 30 V | - 5.4 A | 110 mOhms | 4.7 nC |
