- Manufacture :
- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,292
In-stock
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Infineon Technologies | MOSFET 30V Dual N and P Ch HEXFET 20-8 20VGS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 6.8 A, 4.6 A | 22 mOhms, 51 mOhms | 1.3 V, - 1.3 V | 6.8 nC, 8.1 nC | HEXFET | |||
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2,932
In-stock
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IR / Infineon | MOSFET TRENCH MOSFET - PACKAGE | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel, P-Channel | 30 V, - 30 V | 6.8 A, 4.6 A | 40 mOhms, 103 mOhms | 1.3 V, - 1.3 V | 6.8 nC, 8.1 nC | Enhancement |
