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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,580
In-stock
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IR / Infineon | MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 8.3 nC | Enhancement | Directfet | ||||
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2,080
In-stock
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Infineon Technologies | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 20 V | SMD/SMT | DirectFET-SB | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 62 mOhms | 4 V | 8.3 nC | Enhancement | ||||
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2,015
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.4 A | 24 mOhms | 1 V | 12.9 nC | Enhancement | ||||
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2,063
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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326
In-stock
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Texas instruments | MOSFET 100V, 49mOhm NexFET Power MOSFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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3,596
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||
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21,000
In-stock
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Texas instruments | MOSFET N-CH Power MOSFET 12V 9.3mohm | 8 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 14.4 A | 9.3 mOhms | 800 mV | 5.1 nC | Depletion | NexFET | |||
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GET PRICE |
9,000
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||
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GET PRICE |
869
In-stock
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IR / Infineon | MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg | 20 V | SMD/SMT | DirectFET-SB | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 14.4 A | 51 mOhms | 5 V | 8.3 nC |