- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
1,023
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 3.5 V | 82 nC | SuperFET II | ||||
|
|
GET PRICE |
1,448
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 190 mohm 650V FRFET | 20 V, 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | SuperFET II FRFET | |||
|
|
GET PRICE |
472
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-CHAN MOSFET | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.6 A | 190 mOhms | 63 nC | SuperFET II | |||||
|
|
GET PRICE |
450
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 190 mOhm, FRFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 190 mOhms | 5 V | 60 nC | Enhancement | SuperFET II FRFET | ||
|
|
GET PRICE |
508
In-stock
|
Fairchild Semiconductor | MOSFET SprFET2 650V 190mohm FRFET TO247 longlead | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 168 mOhms | 5 V | 60 nC | SuperFET II | |||
|
|
GET PRICE |
142
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.6 A | 401 mOhms | 3 V | 63 nC | Enhancement | SuperFET II |
