- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
9,856
In-stock
|
STMicroelectronics | MOSFET N-Channel 650V Pwr Mosfet | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15.5 A | 270 mOhms | Enhancement | |||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.34 Ohm 15A SuperMESH 3 2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 620 V | 15.5 A | 280 mOhms | 105 nC | Enhancement | |||
|
|
GET PRICE |
988
In-stock
|
STMicroelectronics | MOSFET N-Channel 650V Pwr Mosfet | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 15.5 A | 270 mOhms | Enhancement |
