- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
145,738
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-26-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
206,500
In-stock
|
onsemi | MOSFET 20V 540mA Dual N-Channel w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 700 mOhms | Enhancement | ||||
|
|
GET PRICE |
10,237
In-stock
|
Diodes Incorporated | MOSFET 250mW 20V | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | ||||
|
|
GET PRICE |
11,205
In-stock
|
Diodes Incorporated | MOSFET 20V 540mA | 8 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
20,000
In-stock
|
onsemi | MOSFET 20V 540mA/-430mA Complementary w/ESD | 6 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 540 mA | 550 mOhms, 900 mOhms | Enhancement | ||||
|
|
GET PRICE |
6,101
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | ||
|
|
GET PRICE |
641,500
In-stock
|
Diodes Incorporated | MOSFET 20V 540mA | 8 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
3,765
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
1,560
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 8 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
12,378
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | ||
|
|
GET PRICE |
6,919
In-stock
|
onsemi | MOSFET NFET SOT563 20V 540MA TR | SMD/SMT | SOT-563-6 | Reel | 2 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | ||||||||
|
|
GET PRICE |
10,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 346 mOhms | 1.2 V | 2.26 nC | Enhancement | ||
|
|
GET PRICE |
2,618
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 540 mA | 2 Ohms | 1.6 V | 0.87 nC | Enhancement | ||
|
|
GET PRICE |
1,678
In-stock
|
Diodes Incorporated | MOSFET 20V N-CHANNEL | 8 V | SMD/SMT | SOT-523-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 540 mA | 550 mOhms | Enhancement | ||||
|
|
GET PRICE |
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement |
