- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
65
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||
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GET PRICE |
2,350
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 139W 1350pF 15.8A | SMD/SMT | DFN8x8-5 | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | |||||||||
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GET PRICE |
792
In-stock
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Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||
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GET PRICE |
1,002
In-stock
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Toshiba | MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | |||||
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GET PRICE |
401
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 30 nC | Enhancement | ||||
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GET PRICE |
30
In-stock
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Toshiba | MOSFET N-Ch 15.8A 40W FET 600V 1350pF 43nC | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 43 nC | |||||||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 180 mOhms | 3 V | 43 nC | Enhancement |
