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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Number of Channels :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
BSZ16DN25NS3 G
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5,310
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Infineon Technologies MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 10.9 A 146 mOhms 2 V 11.4 nC Enhancement OptiMOS
BSC16DN25NS3 G
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RFQ
4,887
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Infineon Technologies MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 20 V SMD/SMT TDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 10.9 A 146 mOhms        
ZXMN4A06KTC
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2,237
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Diodes Incorporated MOSFET 40V 10.9A N-CHANNEL MOSFET 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 40 V 10.9 A 50 mOhms     Enhancement  
BSZ16DN25NS3GATMA1
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RFQ
Infineon Technologies MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 20 V SMD/SMT TSDSON-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 250 V 10.9 A 146 mOhms 2 V 11.4 nC Enhancement OptiMOS
IPL65R340CFDAUMA1
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RFQ
Infineon Technologies MOSFET N-Ch 700V 10.9A VSON-5 30 V SMD/SMT VSON-4 - 40 C + 150 C Reel 2 Channel Si N-Channel 650 V 10.9 A 340 mOhms 4 V 41 nC   CoolMOS
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