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- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Tradename | |
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624
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | 158 nC | OptiMOS | |||
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5,000
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Siliconix / Vishay | MOSFET -100V Vds TrenchFET -/+20V Vgs TO-220AB | 20 V | Through Hole | TO-220AB | - 55 C | + 175 C | Tube | 1 Channel | P-Channel | - 100 V | - 120 A | 11.4 mOhms | - 2.5 V | 125 nC |
