Build a global manufacturer and supplier trusted trading platform.
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRF6644TRPBF
GET PRICE
RFQ
4,205
In-stock
Infineon Technologies MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs 20 V SMD/SMT DirectFET-MN - 40 C + 150 C Reel 1 Channel Si N-Channel 100 V 10.3 A 10.3 mOhms 4.8 V 35 nC Enhancement Directfet
IPAW60R600CEXKSA1
GET PRICE
RFQ
505
In-stock
Infineon Technologies MOSFET CONSUMER 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 600 V 10.3 A 1.4 Ohms 2.5 V 20.5 nC Enhancement CoolMOS
IPA60R400CEXKSA1
GET PRICE
RFQ
813
In-stock
Infineon Technologies MOSFET N-Ch 600V 10.3A TO220FP-3 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 600 V 10.3 A 400 mOhms 3 V 32 nC   CoolMOS
DMN3016LSS-13
GET PRICE
RFQ
1,734
In-stock
Diodes Incorporated MOSFET 30V N-Ch Enh FET 20Vdss 1.5W 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 10.3 A 8 mOhms 1.3 V 25.1 nC Enhancement  
DMN6013LFG-7
GET PRICE
RFQ
3,420
In-stock
Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF 20 V SMD/SMT PowerDI3333-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 10.3 A 12.3 mOhms 1.8 V 26.6 nC Enhancement  
DMN6013LFG-13
VIEW
RFQ
Diodes Incorporated MOSFET 60V N-Ch Enh FET 20Vgs 10.3A 2577pF 20 V SMD/SMT PowerDI3333-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 60 V 10.3 A 12.3 mOhms 1.8 V 26.6 nC Enhancement  
Page 1 / 1