- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,217
In-stock
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Fairchild Semiconductor | MOSFET -20V Dual P-Ch PowerTrench MOSFET | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 3.7 A | 72 mOhms | Enhancement | PowerTrench | |||||
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5,010
In-stock
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Fairchild Semiconductor | MOSFET P-Ch 1.5V Specified PowerTrench | 8 V | SMD/SMT | WLCSP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 100 mOhms | Enhancement | PowerTrench | |||||
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5,392
In-stock
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Nexperia | MOSFET Broad small-signal MOSFET Portfolio | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | |||||
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4,246
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl | 12 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 65 mOhms | 8 nC | ||||||||
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2,140
In-stock
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Nexperia | MOSFET PMV50UPE/TO-236AB/REEL 7" Q3/T | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 50 mOhms | - 900 mV | 15.7 nC | Enhancement | ||||
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46
In-stock
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Fairchild Semiconductor | MOSFET 20V P-Channel 1.5V Specfied PowerTrench | +/- 8 V | SMD/SMT | WLCSP-4 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 143 mOhms | - 1.2 V | 15 nC | PowerTrench | |||||
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490
In-stock
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Nexperia | MOSFET 20V, SOT1118 MOSFET-SCHOTTKY | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement |
