- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
2,483
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | - 4 V | 103 nC | Enhancement | PolarP | ||
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GET PRICE |
190
In-stock
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IXYS | MOSFET TrenchP Power MOSFET | SMD/SMT | TO-252-3 | Tube | Si | P-Channel | - 50 V | - 48 A | 30 mOhms | ||||||||||
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GET PRICE |
40
In-stock
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IXYS | MOSFET -48.0 Amps -200V 0.085 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 200 V | - 48 A | 85 mOhms | Enhancement | |||||
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GET PRICE |
100
In-stock
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IXYS | MOSFET TenchP Power MOSFET | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 50 V | - 48 A | 30 mOhms | |||||||||
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VIEW | IXYS | MOSFET TenchP Power MOSFET | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | P-Channel | - 50 V | - 48 A | 30 mOhms | ||||||||||
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VIEW | Siliconix / Vishay | MOSFET P-Channel 80V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 48 A | 0.023 Ohms | - 3.5 V | 145 nC | Enhancement | TrenchFET |
