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Vds - Drain-Source Breakdown Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP60R074C6XKSA1
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573
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Infineon Technologies MOSFET N-Ch 650V 57.7A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 57.7 A 67 mOhms 2.5 V 138 nC Enhancement CoolMOS
IPP65R074C6XKSA1
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385
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Infineon Technologies MOSFET N-Ch 700V 57.7A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 57.7 A 67 mOhms 2.5 V 138 nC Enhancement CoolMOS
IPP60R074C6
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RFQ
90
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Infineon Technologies MOSFET N-Ch 650V 57.7A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 57.7 A 67 mOhms 2.5 V 138 nC Enhancement CoolMOS
IPP65R074C6
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RFQ
482
In-stock
Infineon Technologies MOSFET N-Ch 700V 57.7A TO220-3 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 57.7 A 67 mOhms 2.5 V 138 nC Enhancement CoolMOS
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