- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
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13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
864
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
988
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
3,510
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
571
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 160 mOhms | 3 V | 75 nC | CoolMOS | |||
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GET PRICE |
100
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||
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GET PRICE |
285
In-stock
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Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||
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GET PRICE |
468
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||
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GET PRICE |
88
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
280
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 23.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | ||
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GET PRICE |
500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||
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|
GET PRICE |
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||
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VIEW | Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS |
