- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
899
In-stock
|
Infineon Technologies | MOSFET PLANAR_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 6.8 A | 480 mOhms | 18 nC | Enhancement | |||||
|
GET PRICE |
2,700
In-stock
|
Siliconix / Vishay | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 0.035 Ohms | - 2.5 V | 21 nC | Enhancement | TrenchFET | |||
|
GET PRICE |
580
In-stock
|
Nexperia | MOSFET PMPB48EP/SOT1220/REEL 7" Q1/T1 | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 40 mOhms | - 2.5 V | 26 nC | Enhancement | ||||
|
GET PRICE |
9,212
In-stock
|
Fairchild Semiconductor | MOSFET -30V P-Ch PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6.8 A | 35 mOhms | Enhancement | PowerTrench |