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Vgs - Gate-Source Voltage :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
FDS8813NZ
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RFQ
3,664
In-stock
Fairchild Semiconductor MOSFET 30 Volt N-Ch PowerTrench MOSFET 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 18.5 A 4.5 mOhms   Enhancement PowerTrench
STB21N90K5
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RFQ
869
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STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 30 V SMD/SMT TO-263-3 - 55 C + 150 C Reel   Si N-Channel 900 V 18.5 A 299 mOhms 43 nC    
STW21N90K5
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RFQ
501
In-stock
STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 30 V Through Hole TO-247-3 - 55 C + 150 C Tube   Si N-Channel 900 V 18.5 A 299 mOhms 43 nC    
STF21N90K5
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RFQ
883
In-stock
STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 18.5 A 299 mOhms 43 nC    
STP21N90K5
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RFQ
865
In-stock
STMicroelectronics MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 18.5 A 299 mOhms 43 nC    
FQA19N60
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RFQ
443
In-stock
Fairchild Semiconductor MOSFET 600V N-CH QFET 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 18.5 A 380 mOhms   Enhancement QFET
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