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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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2,106
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STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II FET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.86 A | 130 mOhms | 4 V | 62.5 nC | ||
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1,200
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STMicroelectronics | MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 13.86 A | 130 mOhms | 4 V | 62.5 nC |
