- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,265
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -680mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 680 mA | 1.4 Ohms | - 2 V | - 6.4 nC | Enhancement | ||
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GET PRICE |
485
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -680mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 680 mA | 1.4 Ohms | - 2 V | - 6.4 nC | Enhancement | ||
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GET PRICE |
19,772
In-stock
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Nexperia | MOSFET P-Chan -20V -680mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 680 mA | 850 mOhms |
