MOSFET - Kaimeite

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6 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	TK39J60W,S1VQ		GET PRICE	PDF RFQ	6,680 In-stock	Toshiba	MOSFET N-Ch 38.8A 270W FET 600V 4100pF 110nC	10 V	Through Hole	TO-3PN-3			Reel	1 Channel	Si	N-Channel	600 V	38.8 A	65 mOhms		135 nC
	TK39N60W5,S1VF		GET PRICE	PDF RFQ	20,000 In-stock	Toshiba	MOSFET Power MOSFET N-Channel	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	38.8 A	62 mOhms	3 V	135 nC	Enhancement
	TK39A60W,S4VX		GET PRICE	PDF RFQ	66 In-stock	Toshiba	MOSFET N-Ch DTMOSIV 600 V 50W 4100pF 38.8A	30 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	38.8 A	55 mOhms	3.7 V	110 nC	Enhancement
	TK39N60X,S1F		GET PRICE	PDF RFQ	52 In-stock	Toshiba	MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V)	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	38.8 A	55 mOhms	3.5 V	85 nC	Enhancement
	TK39N60W,S1VF		GET PRICE	PDF RFQ	20,000 In-stock	Toshiba	MOSFET DTMOSIV 600V 65mOhm 38.8A 270W 4100pF	30 V	Through Hole	TO-247-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	38.8 A	55 mOhms	2.7 V to 3.7 V	110 nC		DTMOSIV
	TK39J60W5,S1VQ		GET PRICE	PDF RFQ	2 In-stock	Toshiba	MOSFET N-Ch 38.8A 270W FET 600V 4100pF 135nC	30 V	Through Hole	TO-3PN-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	38.8 A	55 mOhms	2.7 V to 3.7 V	110 nC	Enhancement

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