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- Vgs - Gate-Source Voltage :
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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
3,000
In-stock
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Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 0.2 Ohms, 0.2 Ohms | 0.45 V, 0.45 V | 1.25 nC, 1.25 nC | Enhancement | ||
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GET PRICE |
4,435
In-stock
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Toshiba | MOSFET Small-signal MOSFET N-Channel | 8 V, 8 V | SMD/SMT | ES6-6 | - | - | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 0.8 A, 0.8 A | 235 mOhms, 235 mOhms | 1 V, 1 V |
