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- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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109
In-stock
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Infineon Technologies | MOSFET 30V 179A 2.2 mOhm 36 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 179 A | 2.2 mOhms | 1.7 V | 36 nC | |||
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550
In-stock
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Toshiba | MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 | 20 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 120 V | 179 A | 3.6 mOhms | 2 V to 4 V | 130 nC | Enhancement |
