- Manufacture :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,328
In-stock
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Diodes Incorporated | MOSFET P-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 160 mA | 14 Ohms | Enhancement | ||||
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262
In-stock
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Nexperia | MOSFET P-CH -50 V -160 mA | SMD/SMT | SOT-363-6 | Reel | 1 Channel | Si | P-Channel | - 50 V | - 160 mA | 7.5 Ohms | 0.35 nC | |||||||
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2,531
In-stock
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Diodes Incorporated | MOSFET PMOS-Dual | 20 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 160 mA | 8 Ohms | Enhancement | ||||
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5,398
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH -50V 6Ohm FET -4V Vgs -200mA | 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 50 V | - 160 mA | 6 Ohms | - 1.2 V | 0.58 nC | Enhancement |
