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Manufacture :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFN210N20P
1+
$33.580
5+
$33.240
10+
$30.980
25+
$29.590
RFQ
229
In-stock
IXYS MOSFET 188 Amps 200V 0.0105 Rds 20 V Chassis Mount SOT-227-4 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 188 A 10.5 mOhms       HyperFET
TPN1R603PL,L1Q
1+
$1.310
10+
$1.050
100+
$0.808
500+
$0.714
5000+
$0.489
RFQ
333
In-stock
Toshiba MOSFET N-Ch 30V 2970pF 41nC 33A 30W 20 V SMD/SMT TSON-Advance-8   + 175 C Reel 1 Channel Si N-Channel 30 V 188 A 1.2 mOhms 1.1 V 41 nC Enhancement  
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