- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
6,000
In-stock
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Siliconix / Vishay | MOSFET P-Channel 20V MICRO FOOT | +/- 8 V | SMD/SMT | MicroFoot-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9.7 A | 0.017 Ohms | - 0.9 V | 81 nC | Enhancement | |||
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GET PRICE |
3,825
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement | SIPMOS | ||
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GET PRICE |
2,249
In-stock
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Infineon Technologies | MOSFET P-Ch -60V 9.7A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 9.7 A | 200 mOhms | - 2 V | 21 nC | Enhancement |
