- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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17,176
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 | +/- 25 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 4 nC | Enhancement | ||
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GET PRICE |
5,616
In-stock
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onsemi | MOSFET -20V -400mA P-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 400 mA | 550 mOhms | Enhancement | ||||
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GET PRICE |
1,240
In-stock
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Diodes Incorporated | MOSFET 250mW -20Vdss | 8 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 400 mA | 900 mOhms | Enhancement | ||||
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GET PRICE |
8,885
In-stock
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Diodes Incorporated | MOSFET 30V P-CH MOSFET | +/- 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 400 mA | 2.4 Ohms | - 2.3 V | 1.3 nC | Enhancement | ||
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GET PRICE |
3,352
In-stock
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onsemi | MOSFET PFET 20V 0.4A 80MOH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 400 mA | 550 mOhms | 2.18 nC |
