- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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11,747
In-stock
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Fairchild Semiconductor | MOSFET 40V PCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.2 A | 22 mOhms | Enhancement | PowerTrench | ||||
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2,889
In-stock
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Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | |||
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1,363
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -8.2A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8.2 A | 21 mOhms | - 36 nC | Enhancement | OptiMOS | |||
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2,199
In-stock
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Infineon Technologies | MOSFET P-Ch -20V -8.2A DSO-8 OptiMOS P | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 8.2 A | 21 mOhms | - 26 nC | Enhancement | OptiMOS | |||
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2,482
In-stock
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onsemi | MOSFET PFET UDFN 20V 8.2A 18MOHM | +/- 8 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.2 A | 14.6 mOhms | - 1 V | 28 nC | Enhancement |
